Biography
Dr. Shelja has joined as Assistant Professor in the Department of Electronics and Communication Engineering, Anurag University, Hyderabad, India in August 2022. She has received her Ph.D. degree in VLSI (Nano Devices) from Electronics and Communication Department, National Institute of Technology, Hamirpur, Himachal Pradesh. She has also a research as well as teaching experience of 1.5 years as a Lab Engineer under SMDP-C2SD project offered by MietY at Electronics and Communication Department, National Institute of Technology, Hamirpur, Himachal Pradesh. She has a keen research and teaching interest in VLSI Design, Nano Devices, etc. She is doing research in the VLSI from more than 5 years and published more than 10 research articles in reputed journals and conferences. She has attended various workshops, short term courses and conferences during her academic career.
Research Interests
Nanoscale Device Design and Modelling
Negative Capacitance Field Effect Transistors (FETs)
Device design and circuit analysis
Low Power and High-Performance VLSI design
Emerging Nano Devices and IC technologies
Teaching Interests
VLSI Design Techniques
Electronic Devices and Circuits
Digital Electronics and Logic Design
VLSI Technology
Semiconductor Devices Physics & Modelling
Nano Electronics
Selected Publications
- S. Kaushal and A.K. Rana, “Analytical modelling and simulation of negative capacitance junctionless FinFET considering fringing field effects,” Superlattices and Microstructures, vol 155, p.106929, 2021. SCI, Impact Factor: 3.220.
- S. Kaushal, A.K. Rana, and R. Sharma, “Performance Evaluation of Negative Capacitance Junctionless FinFET under Extreme Length Scaling,” Silicon, vol 13, pp. 3681-3690, 2021. SCIE, Impact Factor: 2.941.
- S. Kaushal and A. K. Rana “Negative Capacitance Junctionless FinFET for Low Power Applications: An Innovative Approach,” Silicon, pp. 1-10, 2021 SCIE, Impact Factor: 2.941.
- S. Kaushal and A. K. Rana “Analytical Model of Subthreshold Drain Current for Nanoscale Negative Capacitance Junctionless FinFET”, Microelectronics Journal, vol. 121, p. 105382, 2022. SCIE, Impact Factor: 1.992.
- S. Kaushal and A. K. Rana “Modelling and Analysis of Gate Induced Drain Leakage Current in Negative Capacitance Junctionless FinFET”, Journal of Computational Electronics, 2022. SCIE, Impact Factor: 1.983.
- R. Sharma, A.K. Rana, S. Kaushal, J. King and A. Raman, “Analysis of Underlap Strained Silicon on Insulator MOSFET for Accurate and Compact Modeling,” Silicon, vol 14, pp. 2793–2801, 2022. SCIE, Impact Factor: 2.941.
- S. Kaushal, S. Kaundal and A. K. Rana, “Impact of Spacer Configuration on Negative Capacitance Multi Gate Junctionless FET,” 2021 International Conference on Computer Communication and Informatics (ICCCI), 2021, pp. 1-5. (Scopus)
- S. Kaundal, S. Kaushal and A. K. Rana, “Performance estimation of junctionless FinFET with graded channel design,” 2017 4th International Conference on Signal Processing, Computing and Control (ISPCC), 2017, pp. 373-376. (Scopus)
- S. Kaushal and A. K. Rana, ” Signal Conditioning ASIC for the detection of Combustible Gases,” Women Researchers in Electronics and Computing (WREC-2021), 2021, pp. 448-456.
- S. Kaushal and A. K. Rana, ” Review on Negative Capacitance Field Effect Transistors for Low Power Applications,” International Conference on Communication Computing and Signal Processing (CCSP-2020).
- S. Kaushal, V. Sulochana and B. Singh, ” Performance Analysis of CNFET Repeaters,” 11th INDIACom; INDIACom-2017, 2017, pp. 5922-5925.
Selected Awards and Honors
External Profile Links
- Ph.D. in VLSI from the Department of Electronics and Communication Engineering, National Institute of Technology, Hamirpur, Himachal Pradesh in the year 2022.
- M.Tech. in VLSI Design from Centre for Development of Advanced Computing (C-DAC), Mohali in the year 2016.
- B.Tech. in Electronics and Communication Engineering from Bahra University, Waknaghat, Solan, Himachal Pradesh in the year 2014.
Websites:
Google Scholar: https://scholar.google.com/citations?user=0RMf_ggAAAAJ&hl=en&oi=ao
ORCID ID: https://orcid.org/0000-0002-5826-360X
